Herein, we successfully fabricate a GaAs nanowire photodetector with Au nanoparticle modification, with only a brief regulation for the evaporation rate and time in the thermal evaporation system. However, the present researches remain major challenges specially on how to effectively enhance the photocurrent of GaAs nanowire photodetectors. Recently, the relevant reports have proposed that the surface state in GaAs nanowires can be improved by sulfur passivation, thereby reducing the dark current of photodetectors. However, the high surface state density of GaAs nanowires usually leads to a large dark current in photodetectors, which seriously affects the device responsivity. In addition to these properties, they have a direct band gap (1.42 eV) and high optical sensitivity, which makes them a potential material for the preparation of room temperature visible-infrared photodetectors. Under the requirement for miniaturization of optoelectronic devices, GaAs nanowires stand out because of their higher carrier mobility and absorption coefficients compared with traditional low-dimensional materials. Photodetectors employing advanced material systems and device designs have attracted significant attention, from the original photovoltaic effect to current intelligent optoelectronic sensors.
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